澳门尼威斯人网站8311

澳门尼威斯人网站8311 > 领导队伍 > Wen Liu

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WEN LIU received the B.S. degree in electrical engineering from Peking University, Beijing, China, in 2004, and the Ph.D. degree from the School of Electrical and Electronic Engineering of the Nanyang Technological University, Singapore, in 2008.

Since 2014, she joined department of Electrical and Electronic Engineering, School of Advanced Technology, Xi’an Jiaotong-Liverpool University, Suzhou, China. Her current research interests include investigation of novel transistor architectures based on new materials with the goal of expanding the frontiers of electronics to reach higher frequencies, higher speed, smaller size, extremely low power consumption, higher operating temperature, particularly the potential of III-V and III-N compound semiconductors for new applications.

She has published 20+ journal papers, 40+ conference papers, and applied 20+ patents. In the last 5 years, she has been granted various level of funds of more than 6 millions RMB.

Qualifications
- Fellow of The Higher Education Academy: PR148220
- Ph.D. , Nanyang Technological University, - 2008
- B.S. , Peking University, Beijing, China - 2004
Experience
- 2014-Present, Lecturer, Department of EEE- School of Advanced Technology, Xi’an Jiaotong-Liverpool University
Research interests
- Wide bandgap semiconductor devices and their integrated circuit
- Wireless power transfer.
Articles
- Y. Liang et al Huiqing Wen, Wen Liu*,., "Characterization of Oxide Trapping in SiC MOSFETs Under Positive Gate Bias," in IEEE Journal of the Electron Devices Society, vol. 10, pp. 920-926, 2022, doi: 10.1109/JEDS.2022.3212697.
- Guangze Zu, Huiqing Wen, Yinxiao Zhu, Rui Zhong , Qinglei Bu, Wen Liu, Yinchao Zhao, and Miao Cui, "Review of Pulse Test Setup for the Switching Characterization of GaN Power Devices," in IEEE Transactions on Electron Devices, 69(6):3003-3013 Jun, 2022 doi: 10.1109/TED.2022.3168238.
- Wang, Qinan ; Zhao, Tianshi ; Zhao, Chun, Liu, W., Yang, L., Liu, Y., Sheng, D., Xu, R., Ge, Y., Tu, X., Gao, H., Zhao, C. / Solid-State Electrolyte Gate Transistor with Ion Doping for Biosignal Classification of Neuromorphic Computing. In: Advanced Electronic Materials. 2022.
- Ang Li, Yi Shen, Ziqian Li, Ivona Z. Mitrovic, Huiqing Wen, Wen Liu*, "A Monolithically Integrated 2-Transistor Voltage Reference With a Wide Temperature Range Based on AlGaN/GaN Technology," in IEEE Electron Device Letters, vol. 43, no. 3, pp. 362-365, March 2022, doi: 10.1109/LED.2022.3146263.( IF 4.187)
- Fan Li, Ang Li, Yuhao Zhu, Chengmurong Ding, Yubo Wang, Weisheng Wang, Miao Cui, Yinchao Zhao, Huiqing Wen, and Wen Liu*, 2021. "Monolithic Si-Based AlGaN/GaN MIS-HEMTs Comparator and Its High Temperature Characteristics" Applied Sciences 11, no. 24: 12057. https://doi.org/10.3390/app112412057
- Yutao Cai*, Yuanlei Zhang, Ye Liang, Ivona Z. Mitrovic, Huiqing Wen, Wen Liu*, and Cezhou Zhao, "Low ON-State Resistance Normally-OFF AlGaN/GaN MIS-HEMTs With Partially Recessed Gate and ZrO? Charge Trapping Layer," in IEEE Transactions on Electron Devices, vol. 68, no. 9, pp. 4310-4316, Sept. 2021, doi: 10.1109/TED.2021.3100002.
- Ang Li, Miao Cui, Yi Shen, Ziqian Li, Wen Liu*, Ivona Z. Mitrovic, Huiqing Wen, and Cezhou Zhao*, Monolithic comparator and sawtooth generator of AlGaN/GaN MIS-HEMTs with threshold voltage modulation and high-temperature applications, IEEE Transactions on Electron Devices, Volume: 68, Issue: 6, Jun 2021. pp 2673-2679. DOI: 202110.1109/TED.2021.3075425
- Miao Cui, Qinglei Bu, Yutao Cai, Wen Liu, Huiqing Wen, Cezhou Zhao et al, “Monolithic Integration Design of GaN-based Power Chip Including Gate Driver for High-Temperature DC-DC Converters” 25 April 2019 Jpn. J. Appl. Phys. 58- 056505
- Y. Cai et al., "Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices," in IEEE Access, vol. 8, pp. 95642-95649, 2020, doi: 10.1109/ACCESS.2020.2995906.
- Yutao Cai, Wen Liu, Miao Cui, Ruize Sun, Yung.C Liang, Huiqing Wen, Li Yang, Siti Supardan, Ivona Z. Mitrovic, Stephen Taylor, Paul R. Chalker and Ce Zhou Zhao, “Effect of Surface Treatment on Electrical Properties of GaN Metal Insulator-Semiconductor Devices with Al2O3 Gate Dielectric” Japanese Journal of Applied Physics, 12 March 2020, Vol 59, No.4, DOI: 10.35848/1347-4065/ab7863
- Miao Cui, Ruize Sun, Qinglei Bu, Wen Liu, Huiqing Wen, Ang Li, Yung Liang, Cezhou Zhao, “Monolithic GaN Half-Bridge Stages with Integrated Gate Drivers for High Temperature DC-DC Buck Converters”. IEEE Access. Vol:7, Page(s): 184375 - 184384 Dec, 09 2019 DOI: 10.1109/ACCESS.2019.2958059.
- 钱洪途,朱永生,邓光敏,刘雯,陈敦军,裴轶.级联结构氮化镓功率器件及其在无线电能传输系统中的应用[J]. 电源学报, 2019,17(3):38-43 核心期刊、JST,CSCD
Proceedings
- Xueteng Li, Miao Cui, and Wen Liu*. “A full GaN-Integrated Sawtooth Generator based on Enhancement-mode AlGaN/GaN MIS-HEMT for GaN Power Converters”, the 17th IEEE international conference on IC design and technology (ICICDT), Suzhou, China. Jun. 17-19, 2019. 10.1109/ICICDT.2019.8790928
- Y. Shen, Z. Li, A. Li and W. Liu*, "Monolithically Integrated PWM Circuit Based on AlGaN/GaN MIS-HMETs for All-GaN Smart Power System," 2021 IEEE 14th International Conference on ASIC (ASICON), Kunming, China 2021, pp. 1-4, doi: 10.1109/ASICON52560.2021.9620315.
Conference presentations
- W. -C. Lai and W. Liu, "Integrated ADC and Low Noise PLL with Low-dropout Regulator for Transformer Coupler Quadrature Hybrid Wireless Charging," 2021 Asia-Pacific International Symposium on Electromagnetic Compatibility (APEMC), 2021, pp. 1-4, doi: 10.1109/APEMC49932.2021.9596767.
- Y. Shen, Z. Li, A. Li and W. Liu, "Monolithically Integrated PWM Circuit Based on AlGaN/GaN MIS-HMETs for All-GaN Smart Power System," 2021 IEEE 14th International Conference on ASIC (ASICON), 2021, pp. 1-4, doi: 10.1109/ASICON52560.2021.9620315.
- A. Li, Y. Shen, Z. Li, Y. Zhu, H. Wen and W. Liu, "Stability Analysis of Monolithic GaN MIS-HEMT Comparator with Device PBTI and Circuit Stress Tests," 2021 IEEE 14th International Conference on ASIC (ASICON), 2021, pp. 1-3, doi: 10.1109/ASICON52560.2021.9620437.
- Miao Cui, Yutao Cai, Sang Lam, Wen Liu, Chun Zhao, Ivona Z. Mitrovic, Stephen Taylor, Paul R. Chalker and Cezhou Zhao, “Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs”, Proc. 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC’18), Jun 6-8, 2018 Marriott Hotel Golden Bay, Shenzhen, P.R.China
- (Invited Speaker) Huiqing Wen, Wen Liu, Cezhou Zhao, “Evaluations of GaN on Si devices for Power Electronics Applications,”, 2018 IEEE 14th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2018), Oct. 31 - Nov. 3, 2018, Huangdao Sheraton Hotel, Qingdao, China
- Xueteng Li, Miao Cui, and Wen Liu. “A full GaN-Integrated Sawtooth Generator based on Enhancement-mode AlGaN/GaN MIS-HEMT for GaN Power Converters”, the 17th IEEE international conference on IC design and technology (ICICDT), Suzhou, China. Jun. 17-19, 2019
- Bohan.Lu, Miao Cui, and Wen Liu. “The impact of AlGaN barrier on transient VTH shifts and VTH hysteresis in depletion and enhancement mode AlGaN/GaN MIS-HEMTs”, the 17th IEEE International Conference on IC Design and Technology (ICICDT), Suzhou, China, Jun,17-19, 2019
Grants
- 2021, Principal investigator, High Reliability Si GaN MIS-HEMTs , Suzhou Science and Technology Project, RMB 50,000
- 2020, Principal investigator, High efficient GaN-on-Si Power Device and its application, the XJTLU Key Programme Special Fund (KSF) Technology Transfer Programme, RMB 2,000,000
- 2020, Principal investigator, E-mode GaN Power Device, Dynax Semiconductor, Inc, RMB 2,000,000
- 2019, co- investigator, Research on high performance silicon based Gan power electronic DC-DC converter, Suzhou Science and Technology Project, RMB 80,000
- 2018, Principal investigator, GaN Based Wireless Power Transmission System for Electric Vehicle, The XJTLU Key Programme Special Fund (KSF)-- Applied Technology Research Programme, RMB 1,000,000
- 2018, Principal investigator, Transfer efficiency improvement with GaN HEMT for the wireless power transmission system, The Natural Science Foundation of the Jiangsu Higher Education Institutions of China, RMB 30,000
- 2017, Principal investigator, High Efficient Au-Free GaN HEMTs and CMOS Dielectrics Formation Technique, Suzhou Science and Technology Project, RMB 50,000
- 2017, co- investigator, “High efficient GaN-on-Si Power Device and its application”（高性能硅基氮化镓电力电子器件技术开发）, XJTLU Key Programme Special Fund （澳门尼威斯人网站8311重点项目建设专项）, 2017-07-01 to 2020-06-30, RMB 1,000,000
Professional service activities
- 2021-now, University Equipment Committee
- 2021-now, School International Committee
- 2019-now, Exam Officer, Department of EEE
- 2018, Associate Chair, Student-Staff Liaison Committee
- 2019, Member, Academic Practice Sub-Committee
- 2021-now，University Equipment Committee
Teaching activities
- EEE410 Final MRes Project
- EEE406 Power Electronics and application of renewable energy
- EEE333 Multimedia information retrieval and technology
Professional memberships
- Member, China Advanced Semiconductor Industry Innovation Alliance
- Fellow of The Higher Education Academy (CPS ): PR148220
- Member, IEEE
- IET Member

电话
+86 (0)51288167756
电子邮件
Wen.Liu@xjtlu.edu.cn
地址
EE314(Engineering Building)
Suzhou Dushu Lake Science and Education Innovation District
Suzhou Industrial Park
Suzhou
P.R.China
215123

Wen LiuPh.D.

Profile

Qualifications

Experience

Research interests

Articles

Proceedings

Conference presentations

Grants

Professional service activities

Teaching activities

Professional memberships