ProfileMiao Cui received her B.S. degree in Materials Physics from Sichuan University in 2008. In 2011, she got her M.S. degree in Materials Physics and Chemistry from Chinese Academy of Sciences (SINANO), Suzhou, China. From 2011 to 2015, she was a process engineer in Lam Research Corporation, Shanghai, China. From 2015-2017, She joined in Xi’an Jiaotong University Suzhou Academy as a lab assistant.
Miao received her PhD degree in Microelectronics from University of Liverpool in 2021. She has been focused on fabrication and characterization of semiconductor devices, including CMOS devices, GaN LEDs, GaN power devices and integrated circuits (ICs). Her current research interests are GaN power devices and integration technology.